Photoelectrochemical (PEC) etching is a simple and inexpensive wet etching approach that is widely used to fabricate porous gallium nitride (GaN) thin films. However, many fundamental issues on the etching mechanism and the optical response of the fabricated porous structure still remain unclear. In this book, PEC etched porous GaN thin films with a variety of morphologies such as circular, hexagonal, leaf like-, and honeycomb-like patterns were described in detail. The effects of semiconductor types, etching voltage and etching duration on the surface morphology and the optical response of the fabricated porous structure were discussed. Attenuated total reflection method which is very sensitive to the surface layer of the porous GaN was applied to extract the carrier concentration, porosity, and layer thicknesses or the porous layer. Through this book, a better understanding of the PEC etching of the porous GaN can be obtained.
Basic Information of Product
Product Status
New
Product No.
69435680
Product Weight(KG)
0.3 kg
Product Dimension (WxLxH)
44cm x 32cm x 10cm
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N/A
Shipping Method
Courier Service
Warranty Type
Local Supplier / Seller Warranty
Warranty Period
14 Days
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WARRANTY: You may return most new, unopened items sold and fulfilled by Penerbit USM within 15 days of delivery for a full new books.
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Key Product Features
wet etching approach
variety of morphologies
Photoelectrochemical (PEC) etching is a simple and inexpensive wet etching approach that is widely used to fabricate porous gallium nitride (GaN) thin films. However, many fundamental issues on the etching mechanism and the optical response of the fabricated porous structure still remain unclear. In this book, PEC etched porous GaN thin films with a variety of morphologies such as circular, hexagonal, leaf like-, and honeycomb-like patterns were described in detail. The effects of semiconductor types, etching voltage and etching duration on the surface morphology and the optical response of the fabricated porous structure were discussed. Attenuated total reflection method which is very sensitive to the surface layer of the porous GaN was applied to extract the carrier concentration, porosity, and layer thicknesses or the porous layer. Through this book, a better understanding of the PEC etching of the porous GaN can be obtained.